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| CMLD6001DO SURFACE MOUNT PICOminiTM DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD6001DO type contains Two (2) Isolated Opposing Configuration, Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a PICOminiTM surface mount package. These devices are designed for switching applications requiring extremely low leakage. MARKING CODE: C60 SOT-563 CASE MAXIMUM RATINGS: (TA=25C) Continuous Reverse Voltage Peak Repetitive Reverse Voltage Continuous Forward Current Forward Surge Current, tp=1 sec. Forward Surge Current, tp=1 sec. Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VR VRRM IF IFSM IFSM PD TJ,Tstg JA 75 100 250 4000 1000 250 -65 to +150 500 UNITS V V mA mA mA mW C C/W ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25C unless otherwise noted) SYMBOL IR BVR VF VF VF CT trr TEST CONDITIONS VR=75V IR=100A IF=1.0mA IF=10mA IF=100mA VR=0, f=1 MHz IR=IF=10mA, RL=100 Rec. to 1.0mA MIN 100 0.85 0.95 1.1 2.0 3.0 MAX 500 UNITS pA V V V V pF s R0 (3-November 2003) Central TM CMLD6001DO SURFACE MOUNT PICOminiTM DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES Semiconductor Corp. SOT-563 CASE - MECHANICAL OUTLINE D A 6 E 5 E 4 B G F 1 2 3 C H R0 LEAD CODE: 1) ANODE D1 2) NC 3) CATHODE D2 4) ANODE D2 5) NC 6) CATHODE D1 MARKING CODE: C60 Dual Opposing Configuration R0 (3-November 2003) |
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